The UM8120DA is a low threshold N-channel MOSFET with extremely low on-resistance. This benefit provides the designer with an excellent efficient device for use in battery and load management applications. The device is available in a space-saving, small-outline DFN3 1.0×0.6 package.

- Drain-Source Voltage (Max): 20V

- Low On-Resistance:

  160mΩ@V_GS=4.5V, I_D=0.6A

  210mΩ@V_GS=2.5V, I_D=0.3A
  270mΩ@V_GS=1.8V, I_D=0.2A

- Continuous Drain Current (Max):

  0.6A@25°C

 

-Battery Packs

-Battery-Powered Portable Equipments

-Cellular and Cordless Telephones

Ordering Information

Part Number	Packaging Type	Marking Code	Shipping Qty
UM8120DA	DFN3 1.0×0.6	E8	10000pcs/7Inch Tape & Reel