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Home > Products > Discrete Device > TVS Diode Array > High and Medium Working Voltage
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Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
SM12 12V Low Capacitance Dual Line ESD Protection Diode Array ACTIVE High & Medium Working Voltage IEC 61000-4-2 140 12 1 16 30 2 1 3/SOT23
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Product Description
 
The SM12/SM15 of transient voltage suppressors (TVS) are designed to protect components which are connected to data and transmission lines from voltage surges caused by electrostatic discharge (ESD). TVS diodes are characterized by their high surge capability, low operating and clamping voltages, and fast response time. This makes them ideal for use as board level protection of sensitive semiconductor components. The dual-junction common-anode design allows the user to protect one bidirectional data line or two unidirectional lines. The low profile SOT23-3 package allows flexibility in the design of “crowded” circuit boards. The SM12/SM15 will meet the surge requirements of IEC 61000-4-2 (Formerly IEC801-2), Level 4, “Human Body Model” for air and contact discharge.
 
Features
 
- Transient Protection for Data & Power Lines to IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)
- Protects One Bidirectional Line or Two Unidirectional Lines
- Working Voltages: 12V (SM12)
                                    15V (SM15)
- Low Clamping Voltage
- Solid-State Silicon Avalanche Technology 
 
Applications
 
- Cellular Handsets and Accessories
- Portable Electronics
- Industrial Controls
- Set-Top Box
- Servers, Notebook and Desktop PC
 
Pin Configurations  
 
 

Electrical Characteristics

Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
12
V
Reverse Breakdown Voltage
VBR
IT=1mA
16
 
18
V
Reverse Leakage Current
IR
VRWM=12V, T=25°C
 
 
1
μA
Clamping Voltage
VC
IPP=5.9A, tP=8/20μs
 
 
23
V
Peak Pulse Current
IPP
tp=8/20μs
 
 
5.9
A
Junction Capacitance
CJ
Pin 1 to 3 and Pin 2 to 3,
VR=0V, f=1MHz
 
20
30
pF
Reverse Dynamic Resistance
Rdyn,rev
IPP<2A
 
1.12
 
Ω
Forward Dynamic Resistance
Rdyn,fwd
 
0.81
 
Reverse Dynamic Resistance
Rdyn,rev
IPP>2A
 
0.92
 
Ω
Forward Dynamic Resistance
Rdyn,fwd
 
0.42
 
 
Ordering Information
 
Part Number
Working Voltage
Packaging Type
Channel
Marking Code
Shipping Qty
SM12
12.0V
SOT23-3
2
S12
3000pcs/7Inch
Tape & Reel
 
@2014 Union Semiconductor Limited. All rights Reserved. 滬ICP備09013408
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