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Home > Products > Discrete Device > TVS Diode Array > High and Medium Working Voltage
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Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
UM5079 7V Single Line ESD Protection Diode Array ACTIVE High & Medium Working Voltage IEC 61000-4-2(ESD)/IEC 61000-4-4(EFT) 200 7 1 7.5 50 1 0 2/DFN 1.0×0.6
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Product Description  

The UM5075/5079 ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. 
The UM5075/5079 ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM5075 is available in SOD523 package and the UM5079 is available in DFN2 1.0×0.6 (compatible with SOD882/SOD923) package, both with working voltage of 7 volt. 
It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, ±15kV air, ±15kV contact discharge.
 
Features
 
- Transient Protection for Data Lines to
  IEC 61000-4-2 (ESD) ±15kV (Air), ±15kV (Contact)
  IEC 61000-4-4 (EFT) 50A (tP=5/50ns)
- Small Package for Use in Portable Electronics
- Suitable Replacement for MLV’s in ESD Protection Applications
- Protect One I/O or Power Line
- Low Clamping Voltage
- Stand-Off Voltage: 7V
- Low Leakage Current
- Solid-State Silicon-Avalanche Technology
 
Applications
 
- Cell Phone Handsets and Accessories
- Personal Digital Assistants (PDA’s)
- Notebooks, Desktops and Servers
- Portable Instrumentation
- Cordless Phones
- Digital Cameras
- Peripherals
- MP3 Players
 
Pin Configurations  

 
 
Electrical Characteristics
(T=25°C, Device for 7.0V Reverse Stand-Off Voltage)

Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
7
V
Reverse Breakdown Voltage
VBR
IT=1mA
7.5
8.2
8.9
V
Reverse Leakage Current
IR
VRWM=7V, T=25°C
 
0.005
1
μA
Clamping Voltage
VC
IPP=5A, tP=8/20μs
 
 
11.4
V
IPP=12A, tP=8/20μs
 
 
16.4
Forward Voltage
VF
IF =10mA
 
0.8
 
V
Junction Capacitance
CJ
VR=0V, f=1MHz
 
40
50
pF
Junction Capacitance
CJ
VR=2.5V, f=1MHz
 
30
40
pF
 
 
Ordering Information

Part Number  
Working Voltage
Packaging Type
Channel
Marking Code
Shipping Qty
UM5079
7.0V
DFN2 1.0×0.6
1
E3
5000pcs/7Inch
Tape & Reel
  
@2014 Union Semiconductor Limited. All rights Reserved. 滬ICP備09013408
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