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Home > Products > Discrete Device > TVS Diode Array > General Purpose Protection
Datasheet Reliability Report Package Information Order Sample  
Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
UESD6V85CT36 5-Line ESD Protection Diode Array ACTIVE General Purpose Protection IEC 61000-4-2 140 5 0.1 6 50 5 0 6/SOT363
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Product Description  

The UESD6V85CT36 of TVS array is designed to protect sensitive electronics from damage or latch-up due to ESD, for use in applications where board space is at a premium. It is unidirectional device and may be used on lines where the signal polarities are above ground, each device will protect up to five lines.
TVS diodes are solid-state devices feature large cross-sectional area junctions for conducting high transient currents, specifically for transient suppression. It offers desirable characteristics for board level protection including fast response time, low clamping voltage, and no device degradation.
The UESD6V85CT36 may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4. The small package makes them ideal for use in portable electronics such as cell phones, PDAs, notebook computers, and digital cameras.
 
Features
 
- Transient Protection for Data Lines to IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)
- Protects Five I/O Lines
- Ultra-Small SC70-6/SC88/SOT363 Package
- Working Voltages: 5V
- Low Leakage Current
- Low Operating and Clamping Voltage
- Solid-State Silicon Avalanche Technology
 
Applications
 
- Cellular Handsets & Accessories
- Cordless Phones
- Personal Digital Assistants (PDAs)
- Notebooks & Handhelds
- Portable Instrumentation
- Digital Cameras
- Peripherals
- MP3 Players
 
Pin Configurations  

 
             UESD6V85CT36

Electrical Characteristics

Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
5
V
Reverse Breakdown Voltage
VBR
IT=1mA
6
6.8
7.2
V
Reverse Leakage Current
IR
VRWM=5V, T=25°C
 
 
0.1
μA
Clamping Voltage
VC
IPP=5A, tP=8/20μs
 
 
9.1
V
IPP=11A, tP=8/20μs
 
 
13
Junction Capacitance
CJ
Pin 1, 3, 4, 5, 6 to 2
VR=0V, f=1MHz
 
40
50
pF
Pin 1, 3, 4, 5, 6 to 2
VR=2.5V, f=1MHz
 
30
40
 
Ordering Information

Part Number  
Working Voltage
Packaging Type
Channel
Marking Code
Shipping Qty
UESD6V85CT36
5V
SC70-6/
SC88/
SOT363
5
52C
3000pcs/7Inch
Tape & Reel
  
@2014 Union Semiconductor Limited. All rights Reserved. 滬ICP備09013408
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