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UM50129
12V單線ESD保護二極管陣列
Datasheet Reliability Report Package Information Order Sample  
Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
UM50129 12V單線ESD保護二極管陣列 ACTIVE High & Medium Working Voltage IEC 61000-4-2 140 12 0.5 16 30 1 0 2/DFN 1.0×0.6
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Product Description  

The UM50125/50129 ESD protection diode is designed to replace multilayer varistors (MLVs) in portable instrumentation, notebook computers, digital power meter, digital camera and communication systems. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The UM50125/50129 ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM50125 is available in SOD523 package and the UM50129 is available in DFN2 1.0×0.6 (compatible with SOD923 & SOD882) packages, both with working voltages of 12 volt. It gives designer the flexibility to protect one unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, ±30kV air, ±30kV contact discharge.
 
Features
 
- Transient Protection for Data Lines to
  IEC 61000-4-2 (ESD): ±30kV (Air), ±30kV (Contact)
- Small Package for Use in Portable Electronics
- Suitable Replacement for MLV’s in ESD Protection Applications
- Protect One I/O or Power Line
- Low Clamping Voltage
- Stand-off Voltage: 12V
- Low Leakage Current
- Solid-State Silicon-Avalanche Technology
 
Applications
 
- Cell Phone Handsets and Accessories
- Notebooks, Desktops and Servers
- Portable Instrumentation and Accessories
- Digital Power Meter
- Digital Cameras
- Communication Systems
 
Pin Configurations  

 
 
Electrical Characteristics
(T=25°C, Device for 12.0V Reverse Stand-off Voltage)

Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
12
V
Reverse Breakdown Voltage
VBR
IT=1mA
16
 
18
V
Reverse Leakage Current
IR
VRWM=12V, T=25°C
 
 
0.5
μA
Clamping Voltage
VC
IPP=5.9A, tP=8/20μs
 
 
23
V
Junction Capacitance
CJ
VR=0V, f=1MHz
 
20
30
pF
  
Ordering Information

Part Number  
Working Voltage
Packaging Type
Channel
Marking Code
Shipping Qty
UM50129
12.0V
DFN2 1.0×0.6
1
EA
5000pcs/7Inch
Tape & Reel
 
@2014 Union Semiconductor Limited. All rights Reserved.
英聯微電子(鹽城)有限公司  地址:鹽城市鹽南高新區科城街道學海路  電話:0515-88160089
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