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UM5062
5V雙線ESD保護二極管陣列
Datasheet Reliability Report Package Information Order Sample  
Key Specifications
Part Number Description Status SubFamily Transient Standards P (W) at 8/20 usec VRWM MAX (V) IR MAX at VRWM uA at 25°C VBR MIN (V) VPT MIN (V) CTOT MAX (pF) L-G at VR = 0V Lines: Uni-directional Protection Lines: Bi-directional Protection Pin/Package EV Kit Available?
UM5062 5V雙線ESD保護二極管陣列 ACTIVE General Purpose Protection IEC 61000-4-2 140 5 0.1 6 55 2 1 3/QFN 1.4×1.1
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Product Description  

The UM5062 ESD protection diode is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. It features large cross-sectional area junctions for conducting high transient currents, offers desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs.
The UM5062 ESD protection diode protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The UM5062 is available in a QFN3 1.4mm×1.1mm package with working voltages of 5 volt.
It gives designer the flexibility to protect one or two unidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge).
 
Features
 
- Transient Protection for Data & Power Lines to
   IEC 61000-4-2 (ESD) ±15kV (Air), ±8kV (Contact)
- Small Package for Use in Portable Electronics
- Suitable Replacement for MLV’s in ESD Protection Applications
- Protect One or Two I/O Lines
- Low Clamping Voltage
- Stand-off Voltages: 5V
- Low Leakage Current
- Solid-State Silicon-Avalanche Technology
 
Applications
 
- Cell Phone Handsets and Accessories
- Microprocessor Based Equipment Personal Digital Assistants (PDA’s)
- Notebooks, Desktops and Servers
- Portable Instrumentation
- Cordless Phones
- Digital Cameras
- Peripherals
- MP3 Players
 
Pin Configurations  
 
                (Bottom View)

 
Electrical Characteristics
(T=25°C, Device for 5.0V Reverse Stand-off Voltage)
 
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Stand-Off Voltage
VRWM
 
 
 
5
V
Reverse Breakdown Voltage
VBR
IT=1mA
6
6.8
7.2
V
Reverse Leakage Current
IR
VRWM=5V, T=25°C
 
 
0.1
μA
Clamping Voltage
VC
IPP=5A, tP=8/20μs
 
 
9.1
V
IPP=11A, tP=8/20μs
 
 
13
Forward Voltage
VF
IF=10mA
 
0.8
 
V
Junction Capacitance
CJ
VR=0V, f=1MHz
 
40
55
pF
Junction Capacitance
CJ
VR=2.5V, f=1MHz
 
30
40
pF
 
Ordering Information
 
Part Number  
Working Voltage
Packaging Type
Channel
Marking Code
Shipping Qty
UM5062
5.0V
QFN3 1.4×1.1
2
AD
3000pcs/7Inch
Tape & Reel
@2014 Union Semiconductor Limited. All rights Reserved.
英聯微電子(鹽城)有限公司  地址:鹽城市鹽南高新區科城街道學海路  電話:0515-88160089
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